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hexfet power mosfet notes through are on page 2 features and benefits applications ?

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2mm x 2mm pqfn g 3 s d2 d1 4s 5d 6d top view d v ds 30 v v gs 12 v r ds(on) max (@v gs = 4.5v) 15.5 m q g (typical) 11 nc i d (@t c (bottom) = 25c) 12 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (wirebond limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 1.3 max. 8.7 15 76 12 30 6.9 19 12 v w a c

! form quantity IRLHS6342trpbf pqfn 2mm x 2mm tape and reel 4000 IRLHS6342tr2pbf pqfn 2mm x 2mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note features resulting benefits low r dson ( 15.5m ) lower conduction losses low thermal resistance to pcb ( 13c/w) enable better thermal dissipation low profile ( 0.9 mm) results in increased power density compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability downloaded from: http:///

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s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.39mh, r g = 50 , i as = 8.5a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 12a by die-source to lead-frame bonding technology thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 13 r jc (top) junction-to-case CCC 90 c/w r ja junction-to-ambient CCC 60 r ja junction-to-ambient (<10s) CCC 42 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 22 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 12.0 15.5 CCC 15.0 19.5 v gs(th) gate threshold voltage 0.5 CCC 1.1 v ? v gs(th) gate threshold voltage coefficient CCC -4.2 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 39 CCC CCC s q g total gate charge CCC 11 CCC v ds = 15v q gs gate-to-source charge CCC 0.5 CCC q gd gate-to-drain charge CCC 4.6 CCC r g gate resistance CCC 2.1 CCC t d(on) turn-on delay time CCC 4.9 CCC t r r i s e t i m e C C C1 3C C C t d(off) turn-off delay time CCC 19 CCC t f fall time CCC 13 CCC c iss input capacitance CCC 1019 CCC c oss output capacitance CCC 97 CCC c rss reverse transfer capacitance CCC 70 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.2 v t rr reverse recovery time CCC 11 17 ns q rr reverse recovery charge CCC 13 20 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 10 a v gs = 2.5v, i d = 8.5a typ. m v dd = 15v, v gs = 4.5v CCC r g =1.8 v ds = 10v, i d = 8.5a v ds = 24v, v gs = 0v, t j = 125c a i d = 8.5a (see fig. 6 & 17) i d = 8.5a v gs = 0v v ds = 25v v ds = 24v, v gs = 0v t j = 25c, i f = 8.5a, v dd = 15v di/dt = 300 a/ s t j = 25c, i s = 8.5a, v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.18 max. 14 8.5 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 8.5a CCC CCC 76 CCC CCC 12 mosfet symbol na ns a pf nc v gs = 4.5v CCC v gs = 12v v gs = -12v downloaded from: http:///

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.5a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 8.5a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v 60 s pulse width tj = 25c 1.4v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.4v 60 s pulse width tj = 150c vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v downloaded from: http:///
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 10 a i d = 25 a i d = 250 a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 18 20 i d , d r a i n c u r r e n t ( a ) limited by package 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wire bond downloaded from: http:///
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fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 15. typical power vs. time fig 14. maximum avalanche energy vs. drain current fig 16.

for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period !
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25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.9a 3.4a bottom 8.5a 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 s i n g l e p u l s e p o w e r ( w ) 0 2 4 6 8 10 12 14 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.5a t j = 125c t j = 25c 5 15 25 35 45 55 65 75 i d , drain current (a) 10 12 14 16 18 20 22 24 26 28 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 2.5v vgs = 4.5v downloaded from: http:///
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fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s '( 1 ) $
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pqfn 2x2 outline package details http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 2x2 outline part marking downloaded from: http:///
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pqfn 2x2 outline tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///
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ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per jedec j-s td-020d ?? ) rohs c ompliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level industrial ? (per jedec jesd47f ?? guidelines ) qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated qual level from "consumer" to "industrial" on page 1, 9 ? updated data sheet with new ir corporate template revision history 12/17/2013 downloaded from: http:///

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